Layer-resolved band bending at the n−SrTiO3(001)/p−Ge(001) interface

The metal - organic semiconductor interface: Dipole and band bending

In recent years there has been growing interest in the field of thin organic films due to their successful application in optical and electronic devices, such as light emitting diodes, solar cells or field effect transistors. The family of the phthalocyanines (PC’s) represents one of the most promising candidates for ordered organic thin films, as these systems possess advantageous attributes s...

Band-bending at buried SiO2/Si interface as probed by XPS.

X-ray photoelectron spectroscopy is used to probe the photoinduced shifts in the binding energies of Si2p, O1s, and C1s of the SiO2/Si interfaces of a number of samples having oxide and/or thin organic layers on top of p- and n-Si wafers. Whereas the photoinduced shifts, in each and every peak related, vary from 0.2 to 0.5 eV for the p-type samples, the corresponding shifts are substantially sm...

Layer-resolved study of Mg atom incorporation at the MgO/Ag(001) buried interface.

By combining x-ray excited Auger electron diffraction experiments and multiple scattering calculations we reveal a layer-resolved shift for the Mg KL23L23 Auger transition in MgO ultrathin films (4-6 Å) on Ag(001). This resolution is exploited to demonstrate the possibility of controlling Mg atom incorporation at the MgO/Ag(001) interface by exposing the MgO films to a Mg flux. A substantial re...

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

Band Offsets at Strained-layer Interfaces

Strained-layer heterojunctions and superlattices have recently shown tremendous potential for device applications because of their flexibility for tailoring the electronic band structure. We present a theoretical model to predict the band offsets at both latticematched and pseudomorphic strained-layer interfaces. The theory is based on the localdensity-functional pseudopotential formalism, and ...